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1

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Stephen J. Pearton, David P. Norton

Journal:

Plasma Processes and Polymers

Année:

2005

Langue:

english

Fichier:

PDF, 522 KB

english, 2005

2

Youth and Social Conflict: Sport and Spectator Violence

Pearton, R.E., Gaskell, G.

Journal:

International Review for the Sociology of Sport

Année:

1981

Langue:

english

Fichier:

PDF, 704 KB

english, 1981

3

A review of Ga 2 O 3 materials, processing, and devices

Pearton, S. J., Yang, Jiancheng, Cary, Patrick H., Ren, F., Kim, Jihyun, Tadjer, Marko J., Mastro, Michael A.

Journal:

Applied Physics Reviews

Année:

2018

Langue:

english

Fichier:

PDF, 9.08 MB

english, 2018

4

Design of edge termination for GaN power Schottky diodes

J. R. Laroche, F. Ren, K. W. Baik, S. J. Pearton, B. S. Shelton, B. Peres

Journal:

Journal of Electronic Materials

Année:

2005

Langue:

english

Fichier:

PDF, 373 KB

english, 2005

5

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices || Failure Analysis of Semiconductor Optical Devices

Ueda, Osamu, Pearton, Stephen J.

Année:

2013

Langue:

english

Fichier:

PDF, 974 KB

english, 2013

6

Romania's Diplomatic Relations with Yugoslavia in the Interwar Period 1919-1941by Eugene Boia

Review by: Maurice Pearton

Journal:

The Slavonic and East European Review

Année:

1994

Langue:

english

Fichier:

PDF, 146 KB

english, 1994

7

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

Whiting, P.G., Holzworth, M.R., Lind, A.G., Pearton, S.J., Jones, K.S., Liu, L., Kang, T.S., Ren, F., Xin, Y.

Journal:

Microelectronics Reliability

Année:

2017

Langue:

english

Fichier:

PDF, 1.76 MB

english, 2017

8

Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy

C.R. Abernathy, S.J. Pearton, N.T. Ha

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 341 KB

english, 1991

9

Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma

J.H. Park, S.H. Lee, K.H. Choi, H.S. Noh, J.W. Lee, S.J. Pearton

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 816 KB

english, 2010

10

GaN electronics for high power, high temperature applications

S.J. Pearton, F. Ren, A.P. Zhang, G. Dang, X.A. Cao, K.P. Lee, H. Cho, B.P. Gila, J.W. Johnson, C. Monier, C.R. Abernathy, J. Han, A.G. Baca, J.-I. Chyi, C.-M. Lee, T.-E. Nee, C.-C. Chuo, S.N.G. Chu

Journal:

Materials Science and Engineering: B

Année:

2001

Langue:

english

Fichier:

PDF, 147 KB

english, 2001

11

GaN: Processing, defects, and devices

Pearton, S. J., Zolper, J. C., Shul, R. J., Ren, F.

Journal:

Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 2.84 MB

english, 1999

12

Dry etching of GaAs in asymmetric bipolar pulsed dc BCl[sub 3] plasmas

Choi, K. H., Lee, S. H., Park, J. H., Sohn, K. Y., Lee, J. W., Pearton, S. J.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2011

Langue:

english

Fichier:

PDF, 680 KB

english, 2011

13

Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors

Stephen J. Pearton, Alexander Y. Polyakov

Journal:

Chemical Vapor Deposition

Année:

2010

Langue:

english

Fichier:

PDF, 386 KB

english, 2010

14

Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S Nigam, J Kim, B Luo, F Ren, G.Y Chung, S.J Pearton, J.R Williams, K Shenai, P Neudeck

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 240 KB

english, 2003

15

Dry etch chemistries for TiO2 thin films

S. Norasetthekul, P.Y. Park, K.H. Baik, K.P. Lee, J.H. Shin, B.S. Jeong, V. Shishodia, E.S. Lambers, D.P. Norton, S.J. Pearton

Journal:

Applied Surface Science

Année:

2001

Langue:

english

Fichier:

PDF, 321 KB

english, 2001

16

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts ton-GaN

L.F. Voss, L. Stafford, R. Khanna, B.P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren, I.I. Kravchenko

Journal:

Journal of Electronic Materials

Année:

2007

Langue:

english

Fichier:

PDF, 642 KB

english, 2007

17

Directional light coupling from microdisk lasers

Levi, A. F. J., Slusher, R. E., McCall, S. L., Glass, J. L., Pearton, S. J., Logan, R. A.

Journal:

Applied Physics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 646 KB

english, 1993

18

Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas

J.Y. Shin, K.H. Choi, K.H. Noh, D.K. Park, K.Y. Sohn, G.S. Cho, H.J. Song, J.W. Lee, S.J. Pearton

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 879 KB

english, 2012

19

ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY

Journal:

International Journal of Modern Physics B

Année:

1993

Langue:

english

Fichier:

PDF, 2.65 MB

english, 1993

20

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices || GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors

Ueda, Osamu, Pearton, Stephen J.

Année:

2013

Langue:

english

Fichier:

PDF, 502 KB

english, 2013

21

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Polyakov, A. Y., Smirnov, N. B., Kozhukhova, E. A., Vdovin, V. I., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 371 KB

english, 2003

22

Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films

Park, Jong Cheon, Jeong, Ok Geun, Kim, Jin Kon, Yun, Young-Hoon, Pearton, Stephen J., Cho, Hyun

Journal:

Thin Solid Films

Année:

2013

Langue:

english

Fichier:

PDF, 895 KB

english, 2013

23

Cold War Crucible: United States Foreign Policy and the Conflict in Romania, 1943-1953by Elizabeth W. Hazard

Review by: Maurice Pearton

Journal:

The Slavonic and East European Review

Année:

1998

Langue:

english

Fichier:

PDF, 129 KB

english, 1998

24

Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors

Chu, Byung Hwan, Nicolosi, Justin, Lo, C. F., Strupinski, W., Pearton, S. J., Ren, F.

Journal:

Electrochemical and Solid-State Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2011

25

[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - Low damage, highly anisotropic dry etching of SiC

Wang, J.J., Hong, J., Lambers, E.S., Pearton, S.J., Ostling, M., Zetterling, C.-M., Grow, J.M., Ren, F., Shul, R.J.

Année:

1998

Langue:

english

Fichier:

PDF, 428 KB

english, 1998

26

Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing

Katz, A., Abernathy, C. R., Pearton, S. J.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 574 KB

english, 1990

27

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 527 KB

english, 1989

28

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Lee, J. W., Mackenzie, K. D., Johnson, D., Sasserath, J. N., Pearton, S. J., Ren, F.

Journal:

Journal of The Electrochemical Society

Année:

2000

Langue:

english

Fichier:

PDF, 549 KB

english, 2000

29

Wet chemical etching of AlN

J. R. Mileham, S. J. Pearton, C. R. Abernathy, J. D. Mackenzie, R. J. Shul, S. P. Kilcoyne

Année:

1995

Langue:

english

Fichier:

PDF, 515 KB

english, 1995

30

Effect of Buffer Oxide Etchant (BOE) on Ti/Al/Ni/Au Ohmic Contacts for AlGaN/GaN Based HEMT

Hwang, Y.-H., Ahn, S., Dong, C., Zhu, W., Kim, B.-J., Ren, F., Lind, A. G., Jones, K. S., Pearton, S. J., Kravchenko, I.

Journal:

ECS Transactions

Année:

2015

Langue:

english

Fichier:

PDF, 376 KB

english, 2015

31

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

Lee, J. W., Mackenzie, K. D., Johnson, D., Pearton, S. J., Ren, F., Sasserath, J. N.

Journal:

MRS Proceedings

Année:

1999

Langue:

english

Fichier:

PDF, 1.74 MB

english, 1999

32

Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications || ZnO Thin-Film and Nanowire-Based Sensor Applications

Pearton, Stephen

Année:

2011

Langue:

english

Fichier:

PDF, 2.61 MB

english, 2011

33

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts

Whiting, P.G., Rudawski, N.G., Holzworth, M.R., Pearton, S.J., Jones, K.S., Liu, L., Kang, T.S., Ren, F.

Journal:

Microelectronics Reliability

Année:

2017

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2017

34

Gallium Oxide || Radiation damage in Ga2O3

Pearton, Stephen

Année:

2019

Langue:

english

Fichier:

PDF, 528 KB

english, 2019

35

Temperature-Dependent Electrical Characteristics of β-Ga 2 O 3 Diodes with W Schottky Contacts up to 500°C

Fares, Chaker, Ren, Fan, Pearton, S. J.

Journal:

ECS Journal of Solid State Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2019

36

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

B.P. Gila, J.W. Johnson, R. Mehandru, B. Luo, A.H. Onstine, V. Krishnamoorthy, S. Bates, C.R. Abernathy, F. Ren, S.J. Pearton

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 77 KB

english, 2001

37

Selective and non-selective wet chemical etching of GaAs0.93P0.07

J. Hong, S.J. Pearton, W.S. Hobson, H. Han

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 247 KB

english, 1996

38

Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

L. Liu, C.Y. Chang, Wenhsing Wu, S.J. Pearton, F. Ren

Journal:

Applied Surface Science

Année:

2011

Langue:

english

Fichier:

PDF, 998 KB

english, 2011

39

ZnO nanowire growth and devices

Y.W. Heo, D.P. Norton, L.C. Tien, Y. Kwon, B.S. Kang, F. Ren, S.J. Pearton, J.R. LaRoche

Journal:

Materials Science and Engineering: R: Reports

Année:

2004

Langue:

english

Fichier:

PDF, 2.16 MB

english, 2004

40

Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

R Mehandru, S Kang, S Kim, F Ren, I Kravchenko, W Lewis, S.J Pearton

Journal:

Materials Science in Semiconductor Processing

Année:

2004

Langue:

english

Fichier:

PDF, 313 KB

english, 2004

41

Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices

S.J. Pearton, A. Katz, A. Feingold, F. Ren, T.R. Fullowan, J.R. Lothian, C.R. Abernathy

Journal:

Materials Science and Engineering: B

Année:

1992

Langue:

english

Fichier:

PDF, 1.36 MB

english, 1992

42

Dry etching and implantation characteristics of III-N alloys

S.J. Pearton, C.B. Vartuli, R.J. Shul, J.C. Zolper

Journal:

Materials Science and Engineering: B

Année:

1995

Langue:

english

Fichier:

PDF, 890 KB

english, 1995

43

Dry etching process of GaAs in capacitively coupled BCl3-based plasmas

J.W. Lee, H.S. Noh, S.H. Lee, J.H. Park, K.H. Choi, S.J. Pearton

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 868 KB

english, 2010

44

The determination of zirconium and aluminium in alloys slags and fumes by 14-mev neutron activation analysis

D.M. Bibby, B.T. Eddy, D.C.G. Pearton

Journal:

Analytica Chimica Acta

Année:

1975

Langue:

english

Fichier:

PDF, 455 KB

english, 1975

45

Effect of thermal stability of GaN epi-layer on the Schottky diodes

K.N Lee, X.A Cao, C.R Abernathy, S.J Pearton, A.P Zhang, F Ren, R Hickman, J.M Van Hove

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 971 KB

english, 2000

46

Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN

D.G Kent, K.P Lee, A.P Zhang, B Luo, M.E Overberg, C.R Abernathy, F Ren, K.D Mackenzie, S.J Pearton, Y Nakagawa

Journal:

Solid-State Electronics

Année:

2001

Langue:

english

Fichier:

PDF, 92 KB

english, 2001

47

Deep levels studies of AlGaN/GaN superlattices

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil’vidskii, S.J. Pearton, A.S. Usikov, N.M. Shmidt, A.V. Osinsky, W.V. Lundin, E.E. Zavarin, A.I. Besulkin

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 229 KB

english, 2003

48

Design of junction termination structures for GaN Schottky power rectifiers

K.H. Baik, Y. Irokawa, F. Ren, S.J. Pearton, S.S. Park, Y.J. Park

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 298 KB

english, 2003

49

Hydrogen incorporation and its temperature stability in SiC crystals

J.M Zavada, R.G Wilson, F Ren, S.J Pearton, R.F Davis

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 275 KB

english, 1997

50

Stability of hydrogen in ScAlMgO4

C.D. Brandle, F. Ren, R.G. Wilson, J.W. Lee, S.J. Pearton, J.M. Zavada

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 232 KB

english, 1997